Semiconductor - Quiz
A) They permanently bond to the lattice. B) They convert into photons. C) They become stationary. D) They do not stay indefinitely.
A) Saturated. B) Extremely dense. C) Highly metallic. D) Very dilute.
A) Bose-Einstein condensate. B) Classical ideal gas. C) Rigid solid crystal. D) Quantum liquid.
A) Heisenberg uncertainty principle. B) Coulomb's law. C) Conservation of energy. D) Pauli exclusion principle.
A) Logarithmic. B) Exponential. C) Parabolic. D) Linear.
A) Much as they would in a vacuum. B) They are unaffected by external forces. C) They move in reverse directions. D) They become instantly stationary.
A) Effective mass. B) Rest mass. C) Atomic mass. D) Relativistic mass.
A) Standard model. B) Bohr model. C) Drude model. D) Ising model.
A) It acts like a metal. B) It is inert. C) It is highly conductive. D) It is unstable.
A) A photon. B) A positron. C) A hole. D) A neutron.
A) Neutral. B) Variable. C) Negative. D) Positive.
A) Negative. B) Infinite. C) Zero. D) Positive.
A) As a metallic fluid. B) Only through complex quantum field theory. C) In simple classical terms. D) As stationary defects.
A) Capacitors B) Vacuum tubes C) Light-emitting diodes D) Resistors
A) Lowering magnetic interference B) Heat dissipation C) Reducing light intensity D) Increasing electrical resistance
A) Hydraulic systems B) Wind turbines C) Electric vehicles D) Pneumatic pumps
A) Voltage stabilizers B) Battery chargers C) Solar heaters D) Thermoelectric coolers
A) Lead and silicon B) Germanium and tin C) Carbon and tin D) Silicon and germanium
A) 8 B) 6 C) 2 D) 4
A) Gallium arsenide B) Organic framework C) Liquid arsenic D) Pure silicon
A) Intermediate conductivity B) Rigid crystalline structure C) Lack of temperature variation D) Absolute zero resistance
A) Bulk ingots B) Thin film structures C) Liquid canisters D) Crystalline wires
A) Thermal insulation B) Integrated circuits C) Radio broadcasting D) Electric motors
A) Chemical purity B) Color transparency C) Weight reduction D) Magnetic permeability
A) Low ambient temperature B) Crystalline faults C) High humidity D) Excessive vacuum
A) 5 to 20 mm B) 500 to 1000 mm C) 10 to 50 mm D) 100 to 300 mm
A) Plasma spraying B) Photolithography C) Czochralski method D) Thermal oxidation
A) Doping the wafer B) Forming silicon dioxide C) Removing impurities D) Etching the circuit
A) Ultraviolet light B) Gamma radiation C) Visible red laser D) Infrared light
A) Laser ablation B) Acid dipping C) Mechanical sanding D) Plasma etching
A) Hydrogen B) Nitrogen C) Argon D) Chlorofluorocarbon
A) On the chamber wall B) In the gas inlet C) On the anode D) On the cathode
A) Diffusion B) Photolithography C) Czochralski growth D) Oxidation
A) Bonding B) Refining C) Etching D) Doping
A) Silicon dioxide layer B) Magnetic field C) Thin film D) P–n junction
A) 500 degrees Celsius B) 2,000 degrees Celsius C) 1,100 degrees Celsius D) Room temperature
A) Silicon carbide B) Gallium arsenide C) Germanium D) Organic compounds
A) Valence bands are filled, preventing electron flow. B) They lack any electrons. C) They have too many free electrons. D) They are composed of plastic.
A) An excess of electrons B) A shortage of electrons C) A neutral charge D) An excess of protons
A) A shortage of electrons B) A shortage of holes C) A high resistance state D) An excess of electrons
A) Homojunctions B) Total annihilation C) Ambipolar diffusion D) Thermal equilibrium
A) Holes B) Ions C) Electrons D) Protons
A) Ions B) Electrons C) Holes D) Photons
A) Excitation B) Generation C) Recombination D) Thermal expansion
A) A wide band of free electrons B) A conductive liquid C) A pure valence band D) A narrow strip of immobile ions
A) The lack of holes B) The excess of photons C) The strip of immobile ions D) The absence of thermal energy
A) Fixed ions B) Electrical conductivity C) Balanced currents D) Temperature difference
A) Immobile ions B) Valence bands C) Neutrons D) Photons
A) Ambipolar diffusion B) Generation C) Recombination D) Doping
A) XLPE with carbon black B) Pure copper C) Gallium arsenide D) Silicon with phosphorus
A) metallic B) n-type C) p-type D) intrinsic
A) n-type B) conductive C) p-type D) insulating
A) Transistor B) Cat's-whisker detector C) Laser diode D) Integrated circuit
A) 1958 B) 1947 C) 1904 D) 1920
A) A high-voltage cable component B) A type of transistor C) A primitive semiconductor diode D) An integrated circuit
A) A magnet B) A laser beam C) An electron microscope D) A hot-point probe
A) Valence band B) Fermi level C) Ground state D) Conduction band
A) Within the conduction band B) Above the conduction band C) Within band gaps D) Within the valence band
A) Semi-insulators B) Sub-metals C) Quantum insulators D) Hyper-conductors
A) Battery electrolytes B) High-heat soldering C) Substrates for HEMT D) Mechanical structural supports
A) Proton emissions B) Electrical resistance C) Magnetic fields D) Thermal energy or radiation
A) The size of the semiconductor sample B) The mass of the dopant atoms C) Quantum statistical mechanics D) The purity of the surrounding air
A) Linear proportion to T B) Independent of T C) Inversely proportional to T D) exp(−EG/kT)
A) Metallic B) Amorphous C) Extrinsic D) Intrinsic
A) Transition metals B) Group III elements C) Noble gases D) Group V elements
A) Donors B) Insulators C) Acceptors D) Traps
A) Phosphorus B) Selenium C) Boron D) Arsenic
A) Thermal melting B) Magnetic deflection C) Ion implantation D) Manual adjustment
A) Silver B) Copper C) Gold D) Selenium
A) Willoughby Smith B) Michael Faraday C) Thomas Johann Seebeck D) Karl Ferdinand Braun
A) Seebeck effect B) Photovoltaic effect C) Rectification D) Hall effect
A) Edwin Herbert Hall B) Felix Bloch C) J.J. Thomson D) Nevill Francis Mott
A) Walter H. Schottky B) Josef Weiss C) Johan Koenigsberger D) Boris Davydov
A) Bernhard Gudden B) John Bardeen C) Felix Bloch D) Alan Herries Wilson
A) An infrared detector B) A vacuum tube C) A radio transmitter D) A working solar cell |
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