A) They permanently bond to the lattice. B) They do not stay indefinitely. C) They convert into photons. D) They become stationary.
A) Extremely dense. B) Saturated. C) Very dilute. D) Highly metallic.
A) Bose-Einstein condensate. B) Classical ideal gas. C) Quantum liquid. D) Rigid solid crystal.
A) Coulomb's law. B) Heisenberg uncertainty principle. C) Conservation of energy. D) Pauli exclusion principle.
A) Parabolic. B) Linear. C) Logarithmic. D) Exponential.
A) They are unaffected by external forces. B) Much as they would in a vacuum. C) They become instantly stationary. D) They move in reverse directions.
A) Effective mass. B) Rest mass. C) Atomic mass. D) Relativistic mass.
A) Standard model. B) Drude model. C) Ising model. D) Bohr model.
A) It is unstable. B) It acts like a metal. C) It is inert. D) It is highly conductive.
A) A photon. B) A hole. C) A positron. D) A neutron.
A) Positive. B) Neutral. C) Variable. D) Negative.
A) Infinite. B) Zero. C) Positive. D) Negative.
A) As a metallic fluid. B) Only through complex quantum field theory. C) In simple classical terms. D) As stationary defects.
A) Light-emitting diodes B) Resistors C) Vacuum tubes D) Capacitors
A) Increasing electrical resistance B) Reducing light intensity C) Lowering magnetic interference D) Heat dissipation
A) Electric vehicles B) Pneumatic pumps C) Wind turbines D) Hydraulic systems
A) Voltage stabilizers B) Thermoelectric coolers C) Solar heaters D) Battery chargers
A) Carbon and tin B) Lead and silicon C) Silicon and germanium D) Germanium and tin
A) 4 B) 2 C) 8 D) 6
A) Pure silicon B) Gallium arsenide C) Liquid arsenic D) Organic framework
A) Absolute zero resistance B) Intermediate conductivity C) Lack of temperature variation D) Rigid crystalline structure
A) Crystalline wires B) Bulk ingots C) Thin film structures D) Liquid canisters
A) Thermal insulation B) Radio broadcasting C) Electric motors D) Integrated circuits
A) Chemical purity B) Magnetic permeability C) Weight reduction D) Color transparency
A) High humidity B) Crystalline faults C) Low ambient temperature D) Excessive vacuum
A) 10 to 50 mm B) 5 to 20 mm C) 500 to 1000 mm D) 100 to 300 mm
A) Photolithography B) Plasma spraying C) Czochralski method D) Thermal oxidation
A) Forming silicon dioxide B) Etching the circuit C) Removing impurities D) Doping the wafer
A) Gamma radiation B) Visible red laser C) Infrared light D) Ultraviolet light
A) Laser ablation B) Acid dipping C) Mechanical sanding D) Plasma etching
A) Argon B) Nitrogen C) Chlorofluorocarbon D) Hydrogen
A) On the chamber wall B) On the cathode C) On the anode D) In the gas inlet
A) Oxidation B) Diffusion C) Czochralski growth D) Photolithography
A) Refining B) Etching C) Doping D) Bonding
A) Silicon dioxide layer B) P–n junction C) Magnetic field D) Thin film
A) 2,000 degrees Celsius B) Room temperature C) 500 degrees Celsius D) 1,100 degrees Celsius
A) Germanium B) Gallium arsenide C) Silicon carbide D) Organic compounds
A) Valence bands are filled, preventing electron flow. B) They lack any electrons. C) They have too many free electrons. D) They are composed of plastic.
A) An excess of electrons B) A neutral charge C) A shortage of electrons D) An excess of protons
A) A high resistance state B) An excess of electrons C) A shortage of holes D) A shortage of electrons
A) Total annihilation B) Homojunctions C) Thermal equilibrium D) Ambipolar diffusion
A) Ions B) Electrons C) Holes D) Protons
A) Electrons B) Ions C) Photons D) Holes
A) Excitation B) Generation C) Recombination D) Thermal expansion
A) A wide band of free electrons B) A narrow strip of immobile ions C) A conductive liquid D) A pure valence band
A) The lack of holes B) The absence of thermal energy C) The strip of immobile ions D) The excess of photons
A) Fixed ions B) Electrical conductivity C) Temperature difference D) Balanced currents
A) Neutrons B) Valence bands C) Immobile ions D) Photons
A) Recombination B) Ambipolar diffusion C) Generation D) Doping
A) Gallium arsenide B) Pure copper C) XLPE with carbon black D) Silicon with phosphorus
A) n-type B) p-type C) intrinsic D) metallic
A) conductive B) p-type C) n-type D) insulating
A) Transistor B) Laser diode C) Integrated circuit D) Cat's-whisker detector
A) 1920 B) 1958 C) 1904 D) 1947
A) An integrated circuit B) A primitive semiconductor diode C) A high-voltage cable component D) A type of transistor
A) An electron microscope B) A magnet C) A laser beam D) A hot-point probe
A) Valence band B) Fermi level C) Ground state D) Conduction band
A) Above the conduction band B) Within the valence band C) Within the conduction band D) Within band gaps
A) Hyper-conductors B) Semi-insulators C) Sub-metals D) Quantum insulators
A) Mechanical structural supports B) High-heat soldering C) Battery electrolytes D) Substrates for HEMT
A) Electrical resistance B) Proton emissions C) Thermal energy or radiation D) Magnetic fields
A) The size of the semiconductor sample B) The purity of the surrounding air C) Quantum statistical mechanics D) The mass of the dopant atoms
A) Linear proportion to T B) Inversely proportional to T C) Independent of T D) exp(−EG/kT)
A) Metallic B) Intrinsic C) Amorphous D) Extrinsic
A) Transition metals B) Group III elements C) Noble gases D) Group V elements
A) Insulators B) Traps C) Acceptors D) Donors
A) Selenium B) Boron C) Arsenic D) Phosphorus
A) Ion implantation B) Thermal melting C) Magnetic deflection D) Manual adjustment
A) Selenium B) Gold C) Silver D) Copper
A) Karl Ferdinand Braun B) Willoughby Smith C) Michael Faraday D) Thomas Johann Seebeck
A) Seebeck effect B) Photovoltaic effect C) Rectification D) Hall effect
A) Nevill Francis Mott B) Felix Bloch C) J.J. Thomson D) Edwin Herbert Hall
A) Josef Weiss B) Johan Koenigsberger C) Boris Davydov D) Walter H. Schottky
A) Felix Bloch B) John Bardeen C) Bernhard Gudden D) Alan Herries Wilson
A) A vacuum tube B) A radio transmitter C) A working solar cell D) An infrared detector |